The first of the so-called diffraction-limited storage rings (DLSRs), MAX I V, has now gone into operation. For this ring, a multibend achromat (MBA) lattice is employed in order to achieve a small electron beam emittance. Several non-conventional technical system solutions have been introduced in order to reduce size, cost, assembly time, installation effort and to increase the ring robustness. E

The MAX IV facility includes two storage rings operated at 1.5 GeV and 3 GeV. Both rings make use of a 100 MHz RF system and are designed to operate with a uniform multibunch fill pattern aswell as employ passive harmonic cavities to damp instabilities and increase Touschek lifetime. Recently, a discussion on timing modes at the MAX IV storage rings has been initiated by the user community. This i

The MAX IV facility includes two storage rings operated at 1.5 GeV and 3 GeV, which are both designed to operate with a uniform, multibunch fill pattern. Both rings have a 100 MHz RF system and employ passive harmonic cavities to damp instabilities and increase Touschek lifetime. Recently, a discussion on timing modes at the MAX IV storage rings has been initiated by the user community. Creating o

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In the twelfth century the Norbertine order was introduced in parts of Scandinavia. One initiator in the north was Eskil, the powerful archbishop of Lund. However, in the beginning of the thirteenth century the mendicant orders were introduced by successors to the archbishopric. This led to a general decline of other orders. In spite of that the Norbertines managed to prosper in Bäckaskog, an abbeIn the twelfth century the Norbertine order was introduced in parts of Scandinavia. One initiator in the north was Eskil, the powerful archbishop of Lund. However, in the beginning of the thirteenth century the mendicant orders were introduced by successors to the archbishopric. This led to a general decline of other orders. In spite of that the Norbertines managed to prosper in Bäckaskog, an abbe

It has previously been reported that in situ formed Sn nanoparticles can successfully initiate GaAs nanowire growth with a self-assembled radial p–n junction composed of a Sn-doped n-type core and a C-doped p-type shell. In this paper, we investigate the effect of fundamental growth parameters on the morphology and crystal structure of Sn-seeded GaAs nanowires. We show that growth can be achieved