Epitaxial growth and characterization of the heusler alloy Mn3Ge for future use in magnetic tunnel junctions
To allow further device scalability within the data storage industry there needs to be continued research of new technologies. One promising technology is the Magnetic Random Access Memory (MRAM), based on magnetoresistive elements, which is non-volatile; consume low power and have fast read and write operations. To make the technology scalable, the bit (the smallest element in the MRAM) needs to