Analysis and optimization by micro-beam X-ray diffraction of Al- GaInAs heterostructures obtained by Selective Area Growth for optoelectronic applications
Growth of AlGaInAs/InP heterostructures by Selective Area Metal Organic Vapour Phase Epitaxy is investigated in this paper using advanced characterization techniques and numerical modelling. Synchrotron radiation and X-Ray optics allow to have micro or sub-micro X-Ray probe. With this probe, it is possible to characterize our samples by X-Ray Diffraction on very restricted area. This technique was