Broadband LDMOS 40 W and 55 W integrated power amplifiers
The performance of broadband microwave 40 W and 55 W LDMOS integrated power amplifiers is reported. A 30 V LDMOS process with 500 nm gate length was used for the design. Single and dual die packages were evaluated. A dual die package provides flexibility in output power and efficiency depending on combiner topology at the input and output of the circuit. Different saturated power and efficiency ar