Vertical III-V Nanowire MOSFETs
Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. This enables fabrication of novel structures where the band-gap can be engineered in the electron
