Tilting Catalyst-Free InAs Nanowires by 3D-Twinning and Unusual Growth Directions
Controlling the growth direction of nanowires is of strategic importance both for applications where nanowire arrays are contacted in parallel and for the formation of more complex nanowire networks. We report on the existence of tilted InAs nanowires on (111)B GaAs. The tilted direction is predominantly the result of a three-dimensional twinning phenomenon at the initial stages of growth, so far
