Topological material in the III--V family : Heteroepitaxial InBi on InAs
InBi(0 0 1) is formed epitaxially on InAs(1 1 1)-A by depositing Bi onto an In-rich surface. Angle-resolved photoemission measurements reveal topological electronic surface states, close to the M high symmetry point. This demonstrates a heteroepitaxial system entirely in the III–V family with topological electronic properties. InBi shows coexistence of Bi and In surface terminations, in contradict
