Cryogenic Ferroelectricity of HZO Capacitors on a III-V Semiconductor
Non-volatile cryogenic memories are crucial for realizing energy-efficient and scaled quantum computing systems. In this letter, we evaluate the cryogenic performance of an HZO-based ferroelectric capacitor (FeCAP) with a compound semiconductor (InAs) as the bottom electrode. We demonstrate that near identical remnant polarization can be obtained at 14 K compared to room temperature by increasing