Electronic structure of [100]-oriented free-standing InAs and InP nanowires with square and rectangular cross sections
We report on a theoretical study of the electronic structure of free-standing InAs and InP nanowires grown along the [100] crystallographic direction, based on an atomistic tight-binding approach. The band structure and wave functions for nanowires with both square (nanowires) and rectangular (nanobelts) cross sections are calculated. A comparison is made between the calculations for InAs, InP, an