Particle-assisted GaxIn1-xP nanowire growth for designed bandgap structures
Non-tapered vertically straight GaxIn1-xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal-organic vapor phase epitaxy. X-ray energy dispersive spectroscopy in transmission electron microscopy revealed homogeneous radial material composition in single nanowi