A 1.6-2.6GHz 29dBm Injection-Locked Power Amplifier with 64% peak PAE in 65nm CMOS
This paper presents a wideband CMOS power amplifier intended for cellular handset applications. The circuit exploits injection locking to achieve a power gain of 20.5dB from a single stage amplifier. The maximum output power of 29dBm, with a peak drain- and power-added-efficiency (PAE) of 66% and 64%, respectively, occurs at a center frequency of 2GHz with a 3V supply. A cross-coupled cascode topo