No title
β-Ga2O3 is a promising ultrawide-bandgap semiconductor for high-power and optoelectronic applications; yet, its intrinsically low thermal conductivity poses challenges for heat dissipation. To clarify how strain and size effects govern phonon transport, we investigate bulk β-Ga2O3 under biaxial tensile strain and finite-size confinement using first-principles calculations and the phonon Boltzmann
