Formation of polar InN with surface Fermi level near the valence band maximum by means of ammonia nitridation
Development of InN films for devices is hindered due to metallic In clusters, formed readily during growth, and unintentional n-type conductivity of the nominally undoped films, including surface electron-accumulation layers via the Fermi level pinning into the conduction band. Plasma nitridation eliminates even large In clusters from the surface by changing them to two-dimensional InN [Yamaguchi
