Electronic structure of [100]-oriented free-standing semiconductor nanowires
We report on a theoretical study of the electronic structure of [100]-oriented free-standing III-V semiconductor nanowires with quadratic (square wire) and rectangular (nanobelt) cross-sections based on an atomistic tight-binding approach. It is shown that at the same cross-section aspect ratio, the characteristics of the band structure and state wave functions of the nanowires in the vicinity of